Back مقاومة مغناطيسية نفقية Arabic Magnetoresistència d'efecte túnel Catalan Magnetischer Tunnelwiderstand German Efecto túnel magnético Spanish Tunnelmagnetotakistus Estonian مغنامقاومت تونلی Persian Magnétorésistance à effet tunnel French トンネル磁気抵抗効果 Japanese 터널자기저항 Korean Tunelowy magnetoopór Polish
Tunnel magnetoresistance (TMR) is a magnetoresistive effect that occurs in a magnetic tunnel junction (MTJ), which is a component consisting of two ferromagnets separated by a thin insulator. If the insulating layer is thin enough (typically a few nanometres), electrons can tunnel from one ferromagnet into the other. Since this process is forbidden in classical physics, the tunnel magnetoresistance is a strictly quantum mechanical phenomenon, and lies in the study of spintronics.
Magnetic tunnel junctions are manufactured in thin film technology. On an industrial scale the film deposition is done by magnetron sputter deposition; on a laboratory scale molecular beam epitaxy, pulsed laser deposition and electron beam physical vapor deposition are also utilized. The junctions are prepared by photolithography.